Method for manufacturing semiconductor device having grown layer

Details Method for manufacturing semiconductor device having grown layer Method for manufacturing semiconductor device having grown layer

1991-11-06

1994-03-22

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156DIG64, C30B 2514

Patent

active

052960862

ABSTRACT:
A semiconductor device is manufactured by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2D). Silicon carbide is grown until it protrudes from the openings (14) to thereby form a silicon carbide seed crystal layer (16) (FIG. 2E). Next, oxidation is carried out, allowing a field oxide layer (20) to be bonded at the portion under the openings (14) and the silicon carbide seed crystal layer (16) to be insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon carbide seed crystal layer (16), thus obtaining an epitaxially grown layers (22). The device is formed in this epitaxially grown layer (22). The silicon carbide grown layer (22) is isolated from the silicon substrate (2) and has the uniform plane bearing, thus allowing no electrostatic capacitance to be caused due to pn junction with the silicon substrate (2) and high-speed operation to be realized. Moreover, the unique plane bearing facilitates control during the manufacturing process.

REFERENCES:
patent: 3425879 (1969-02-01), Shon et al.
patent: 3571919 (1971-03-01), Gleim et al.
patent: 4560642 (1985-12-01), Yonezawa et al.
patent: 4670086 (1987-06-01), Leamy
patent: 4670088 (1987-06-01), Tsaur
patent: 4891092 (1990-01-01), Jastrebski
"Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2 " by D. D. Rathman et al, Journal of Electrochemical Society Solid-State Science and Technology, Oct., 1982, pp. 2303-2306.
"New SOI-Selective Nucleation Epitary" by Ryudai Yonehara et al, Preliminary Bulletin for the 48th Fall Academic Lecture 1987, by the Applied Physics Society, 19p-Q-15, p. 583.

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