Method for manufacturing semiconductor device having a self-plan

Details Method for manufacturing semiconductor device having a self-plan Method for manufacturing semiconductor device having a self-plan

1992-06-19

1994-02-15

Kunemund, Robert

Fishing, trapping, and vermin destroying

437164, 437982, H01L 2102

Patent

active

052866815

ABSTRACT:
The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality.
The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

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