Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-08-09
2005-08-09
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
C438S692000, C438S745000, C438S753000
Reexamination Certificate
active
06927167
ABSTRACT:
A method for manufacturing a semiconductor device with a substrate having a device layer and a backside electrode is disclosed. Here, a surface roughness of the substrate is defined as a ratio between a substantial area and a projected area. The method includes polishing and wet-etching a backside surface of the substrate mechanically with using predetermined abrasive grains so that a surface roughness of the backside surface of the substrate becomes to be equal to or larger than 1.04, and forming the backside electrode on the backside surface of the substrate after polishing and wet-etching the backside surface of the substrate.
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Fukuda Yutaka
Hirano Naohiko
Miura Shoji
Noritake Chikage
Denso Corporation
Nguyen Thanh
Posz Law Group , PLC
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