Method for manufacturing semiconductor device for preventing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S674000

Reexamination Certificate

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07846827

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.

REFERENCES:
patent: 2004/0149992 (2004-08-01), Park et al.
patent: 2005/0272250 (2005-12-01), Yun et al.
patent: 2006/0286745 (2006-12-01), Park et al.
patent: 2008/0003811 (2008-01-01), Lee et al.
patent: 2008/0093741 (2008-04-01), Lee

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