Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-18
2010-12-07
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S674000
Reexamination Certificate
active
07846827
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
REFERENCES:
patent: 2004/0149992 (2004-08-01), Park et al.
patent: 2005/0272250 (2005-12-01), Yun et al.
patent: 2006/0286745 (2006-12-01), Park et al.
patent: 2008/0003811 (2008-01-01), Lee et al.
patent: 2008/0093741 (2008-04-01), Lee
Kim Hyoung Joon
Kim Sung Hyun
Kwon Ho Yup
Park Jeong Hoon
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Mulpuri Savitri
LandOfFree
Method for manufacturing semiconductor device for preventing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device for preventing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device for preventing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4190332