Method for manufacturing semiconductor device for enhancing hydr

Details Method for manufacturing semiconductor device for enhancing hydr Method for manufacturing semiconductor device for enhancing hydr

1996-05-24

1997-10-07

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40TFT, 437 41TFT, H01L 21336, H01L 2184, H01L 29786

Patent

active

056747594

ABSTRACT:
A method of manufacturing a semiconductor device having enhanced hydrogenation effect using a refractory metal capping layer formed over a plasma nitride layer, whereby hydrogen from the plasma nitride layer is diffused into a semiconductor transistor structure under heat treatment.

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Matsumura et al., "Study on Impurity Diffusionin Glow-Discharged Amorphous Silicon", Jap. J. Appl. Phys., vol. 22, No. 5, May 1983, pp. 771-774.

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