Method for manufacturing semiconductor device capable of flatten

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

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438473, 438514, 257915, H01L 2120

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active

061211206

ABSTRACT:
In a method for manufacturing a semiconductor device, an impurity diffusion region is formed within a semiconductor substrate. Then, a chemical dry etching process or a heating process is carried out to remove a contamination layer from the impurity diffusion region. Then, a silicon layer is selectively grown on the impurity diffusion region.

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