Method for manufacturing semiconductor device by forming insulat

Details Method for manufacturing semiconductor device by forming insulat Method for manufacturing semiconductor device by forming insulat

1993-06-10

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437978, 437241, H01L 21316

Patent

active

054440262

ABSTRACT:
The present invention forms a intermediate layer between a conductive layer and BPSG layer. In one embodiment, this intermediate layer is a buffer layer that absorbs excess P ions from the BPSG layer to suppress the formation of bubbles and thereby prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer. In the second embodiment the intermediate layer is a thin nitride layer, which prevents the conductive layer and BPSG layer from being in direct contact with each other to suppress the formation of bubbles and also prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer.

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Wolf et al, Silicon Processing for the VLSI Era vol. 1-Process Technology, pp. 18-34, 193-194, Copyright .COPYRGT.1986 by Lattice Press.

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