Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Luu, Chuong Anh (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S297000, C257S304000, C257S321000
Reexamination Certificate
active
07064370
ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. The method comprises the steps of forming a plurality of lower bit lines arranged in a first direction on a semiconductor substrate by performing ion implantation using a mask defining the lower bit lines, forming a lower field oxide film within a region in which the lower bit lines are formed to define an active region and a device isolation region, forming a first insulating film for accumulating charges on the active region, forming a plurality of word lines arranged in parallel in a second direction orthogonal to the first direction of the lower bit lines, depositing an oxide film on the entire structure of the semiconductor substrate including the lower bit lines and the word lines, flattening the oxide film and then removing the oxide film on the word lines, forming a second insulating film for accumulating charges corresponding to the first insulating film for accumulating charges on the word lines and then forming an upper field oxide film corresponding to the lower field oxide film on the word lines, depositing polysilicon on the entire structure of the semiconductor substrate, performing ion implantation using a mask defining upper bit lines for polysilicon to form the upper bit lines, and then performing ion implantation using a mask defining an upper substrate to form the upper substrate, and removing given portions of the upper bit lines formed on the upper field oxide film to separate the upper bit lines.
REFERENCES:
patent: 5015601 (1991-05-01), Yoshikawa
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5385856 (1995-01-01), Hong
patent: 5418175 (1995-05-01), Hsue et al.
patent: 6136648 (2000-10-01), Oya
patent: 6144064 (2000-11-01), Cho et al.
patent: 6211074 (2001-04-01), Huang et al.
patent: 6335553 (2002-01-01), Ra
patent: 6368916 (2002-04-01), Nakagawa
patent: 6465302 (2002-10-01), Ahn et al.
patent: 6642586 (2003-11-01), Takahashi
patent: 6677199 (2004-01-01), Chang et al.
patent: 6686242 (2004-02-01), Willer et al.
patent: 6689658 (2004-02-01), Wu
Hynix / Semiconductor Inc.
Luu Chuong Anh
Mayer Brown Rowe & Maw LLP
LandOfFree
Method for manufacturing semiconductor device and the device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device and the device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and the device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3620304