Method for manufacturing semiconductor device and MOS field...

Details Method for manufacturing semiconductor device and MOS field... Method for manufacturing semiconductor device and MOS field...

2006-05-31

2009-06-09

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S154000, C438S163000, C438S164000, C438S166000, C438S520000, C438S528000

Reexamination Certificate

active

07544549

ABSTRACT:
Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming area provided in a semiconductor layer formed on an insulator, and a body region, (a) ion implantation of Ar in a boundary region between the source and drain regions to be formed, which corresponds to a region lying in a predeterminate area for forming the body region, and (b) high-temperature anneal for partly recovering crystal defects produced by the ion implantation of the Ar at a temperature higher than the anneal for activation of the first dopant are carried out prior to the ion-implantation of the first dopant.

REFERENCES:
patent: 5917219 (1999-06-01), Nandakumar et al.
patent: 6169000 (2001-01-01), Ohkubo
patent: 6210998 (2001-04-01), Son
patent: 6479868 (2002-11-01), An et al.
patent: 6667517 (2003-12-01), Yamazaki
patent: 6770517 (2004-08-01), Nakauka et al.
patent: 2002/0058361 (2002-05-01), Nakaoka et al.
patent: 11-74538 (1999-03-01), None
patent: 2001-326361 (2001-11-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device and MOS field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device and MOS field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and MOS field... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4145829