Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2011-08-09
2011-08-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S906000, C134S001200, C257SE21228, C257SE21229
Reexamination Certificate
active
07994063
ABSTRACT:
Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.
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Hasebe Rui
Miyashita Masayuki
Ohmi Tadahiro
Teramoto Akinobu
Fourson George
Morgan & Lewis & Bockius, LLP
National University Corporation Tohoku University
Stella Chemifa Corporation
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