Method for manufacturing semiconductor device and epitaxial...

Details Method for manufacturing semiconductor device and epitaxial... Method for manufacturing semiconductor device and epitaxial...

2006-09-28

2010-10-12

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S388000, C438S245000, C438S270000, C438S478000, C438S172000, C438S424000, C438S427000, C257SE21092, C257SE21115

Reexamination Certificate

active

07811907

ABSTRACT:
A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

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