Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-06-05
2007-06-05
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S267000, C438S588000, C438S666000, C257SE27108, C257SE21659
Reexamination Certificate
active
11164134
ABSTRACT:
A method for manufacturing semiconductor device is provided. First, a substrate is provided. Then, a plurality of first gate lines disposed in parallel to each other and a first dummy gate line disposed in a direction perpendicular to the first gate lines are formed on the substrate. There is a first gap between the first dummy gate line and the first gate lines and there is a second gap between every pair of adjacent first gate lines. Thereafter, a second composite layer and a conductive layer are sequentially formed over the substrate. The conductive layer is etched back to form a plurality of second device structures that completely fills the second gaps. Then, the conductive layer in the first gap is removed.
REFERENCES:
patent: 2005/0009312 (2005-01-01), Butt et al.
Chu Chien-Lung
Pittikoun Saysamone
Tseng Wei-Chung
Wei Houng-Chi
Fourson George R.
Jianq Chyun IP Office
Maldonado Julio J.
Powchip Semiconductor Corp.
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