Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-08-30

2011-08-30

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S698000, C257SE21597

Reexamination Certificate

active

08008195

ABSTRACT:
An insulator layer is formed on a part of semiconductor substrate to form an isolation layer that insulates and separates active elements from each other in the first region, and to form a dummy portion which is composed of a base material of the semiconductor substrate exposed in the insulator layer in a second region. Active elements are formed in the first region. A silicide layer is formed on the first and second regions excluding at least a portion in which the TSV electrode should be formed. At least one TSV hole extending from a reverse surface side of the semiconductor substrate to an electrode pad via the second region is formed. A conductive film is formed on the inner wall of the TSV hole to form a TSV electrode electrically connected to the electrode pad.

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