Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2008-04-01
2008-04-01
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S017000, C257SE21531
Reexamination Certificate
active
07351595
ABSTRACT:
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the monitor wafer through BPSG densification during formation of the interlayer insulating film. The characteristic of the monitor element is measured by checking a process influence of the monitor element. Manufacturing conditions are set in accordance with the process influence of the monitor element. Variations in electric characteristics of the main body wafer are reduced in accordance with the set manufacturing conditions.
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Ishii Kazutoshi
Kitajima Yuichiro
Minami Yukimasa
Osanai Jun
Uemura Keisuke
Adams & Wilks
Baumeister B. William
Fulk Steven J.
Seiko Instruments Inc.
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