Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-02
2011-08-02
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000
Reexamination Certificate
active
07989794
ABSTRACT:
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.
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Billah and Chevrel, Journal of Solid State Chemistry, vol. 170, pp. 281-288 (2003).
Kubo Koichi
Toda Haruki
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Valentine Jami M
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