Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-08-30
2011-08-30
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S478000, C257S064000, C257SE33005
Reexamination Certificate
active
08008170
ABSTRACT:
There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.
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Chinone Takako
Higashino Jiro
Liang Ji-Hao
Shibata Yasuyuki
Holtz Holtz Goodman & Chick PC
Stanley Electric Co. Ltd.
Thai Luan C
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