Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-08-30

2011-08-30

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21577

Reexamination Certificate

active

08008197

ABSTRACT:
A method for manufacturing a semiconductor device includes forming in order a barrier film, an insulating film, a first mask, and a second mask having etching properties different from those of the first mask on a substrate, removing the insulating film, the first mask, and the second mask to form a via hole in the insulating film, removing the second mask in a wiring trench forming region including the via hole, and etching the first mask using the second mask as a mask to remove the first mask in the wiring trench forming region. Removing the first mask in the wiring trench forming region includes etching the first mask and etching the barrier film at the bottom of the via hole to partially remove the barrier film at the bottom of the via hole.

REFERENCES:
patent: 7622808 (2009-11-01), Ohtake et al.
patent: 7772112 (2010-08-01), Iba
patent: 2004/0106293 (2004-06-01), Igarashi
patent: 2004/0198037 (2004-10-01), Iba
patent: 2005/0205519 (2005-09-01), Kim et al.
patent: 2006/0186548 (2006-08-01), Enomoto et al.
patent: 2008/0020570 (2008-01-01), Naik
patent: 2002-270586 (2002-09-01), None
patent: 2007-529905 (2007-10-01), None
patent: 2005-091974 (2005-10-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2741324