Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-03-01
2011-03-01
Huynh, Andy (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S197000, C438S431000, C438S931000
Reexamination Certificate
active
07897498
ABSTRACT:
The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.
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Ashigaki Shigeo
Gale Glenn
Hirota Yoshihiro
Kato Yoshihiro
Kushibiki Masato
Brown Valerie
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Huynh Andy
Tokyo Electron Limited
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