Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-03-15

2011-03-15

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S288000, C438S285000

Reexamination Certificate

active

07906416

ABSTRACT:
A method for manufacturing a semiconductor device from a semiconductor wafer having a first major surface, a recess provided inside a periphery on opposite side of the first major surface and surrounded by the periphery, and a second major surface provided at bottom of the recess is provided. The method comprises: fitting into the recess a doping mask having selectively formed openings to selectively cover the second major surface with the doping mask; and selectively introducing dopant into the second major surface.

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