Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1997-08-29

1999-08-17

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438439, 438440, 438448, 438766, H01L 2176, H01L 2131, H01L 21469

Patent

active

059407158

ABSTRACT:
A semiconductor device manufacturing method capable of realizing a fine device isolation by stably suppressing the narrow channel effect and the reverse narrow channel effect in an N-channel MOS transistor. A patterned silicon nitride film 102 is formed, and after a P-type ion implanted layer 103 is formed, a field oxide film 105a is formed. In this process, re-distribution of the P-type impurity is caused by segregation, so that a P-type impurity concentration adjusting region 104a is formed at the surface of a P-type silicon substrate 101 in the proximity of a bird's beak of the field oxide film 105a.

REFERENCES:
patent: 3874919 (1975-04-01), Lehman
patent: 5550074 (1996-08-01), Lin
patent: 5700728 (1997-12-01), Kuo et al.

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