Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-09-18
1999-03-23
Bowers, Charles
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438305, 438407, 438520, H01L 21425
Patent
active
058858865
ABSTRACT:
A method for manufacturing a semiconductor device exhibiting improved short channel effects and increased current driving ability is disclosed. The method includes the steps of: providing a substrate of a first conductivity-type, e.g., P-type; forming a gate insulating layer on the substrate; forming a gate electrode on the gate insulating layer; forming a gate cap insulating layer on the gate electrode; introducing inactive ions of the first conductivity-type into the first conductivity-type semiconductor substrate at both sides of the gate electrode, so as to form amorphous regions; forming first impurity regions of the first conductivity-type near the amorphous regions; and forming second impurity regions of a second conductivity-type, e.g., N-type, in the substrate at both sides of the gate electrode. The method also includes forming source and drain regions of the second conductivity-type in the substrate. The amorphous regions are formed by ion implantation of the inactive ions while the first and second impurity regions and the source and drain regions are formed by ion implantation of active ions. Inactive ions are ions which, after implantation into the amorphous regions, assume an atomic or molecular state in which they act neither as acceptors nor donors. Conversely, active ions act as acceptors or donors after implantation.
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Bowers Charles
Chen Jack
LG Semicon Co. Ltd.
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