Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1999-07-29
2000-07-18
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438425, 438435, 438437, 148DIG50, H01L 2176
Patent
active
060906847
ABSTRACT:
A shallow groove isolation structure (SGI) electrically insulates adjoining transistors on a semiconductor substrate. A pad oxide film is formed on the semiconductor substrate and an oxidation inhibition film is formed on the pad oxide film. Parts of the oxide inhibition film and pad oxide film are removed to form the groove. In particular, the pad oxide film is removed from an upper edge of the groove within a range of 5 to 40 nm. A region of the groove is oxidized in an oxidation environment with a cast ratio of hydrogen (H.sub.2) to oxygen (O.sub.2) being less than or equal to 0.5. At this ratio, the oxidizing progresses under low stress at the upper groove edges of the substrate thereby enabling rounding of the upper groove edges without creating a level difference at or near the upper groove edge on the substrate surface.
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Technical Digest of IEDM' 94, pp. 671-674.
Funayama Kota
Ikeda Shuji
Ishitsuka Norio
Kojima Masayuki
Miura Hideo
Dang Trung
Hitachi , Ltd.
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