Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure

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438107, 438455, 438406, 438589, 438590, H01L 21332

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active

061597767

ABSTRACT:
A normally-off semiconductor device with gate regions formed in a high-quality base is manufactured by forming a P.sup.+ layer in a lower surface of an N.sup.- substrate, selectively forming P.sup.+ gate regions in an upper surface of the N.sup.- substrate, forming intergate P.sup.+ regions in the upper surface of the N.sup.- substrate between the P.sup.+ gate regions, forming an N.sup.+ layer in an upper surface of an N.sup.- substrate, joining the N.sup.- substrate and the N.sup.- substrate to each other by heating them at about 800.degree. C. in a hydrogen atmosphere while the upper surface of the N.sup.- substrate and a lower surface of the N.sup.- substrate are being held against each other, and forming an anode electrode and a cathode electrode.

REFERENCES:
Abstract of Japanese Patent Laid-Open Publication No. 57-83057.
Abstract of Japanese Patent Laid-Open Publication No. 53-16569.
Patent Abstract of Japan; Publication No. 62 62558 A; Date: 03/19/87; Ogura TSUNEO et al.

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