Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438659, 438584, 438592, 438605, 438627, 438643, 438661, H01L 2144

Patent

active

061367087

ABSTRACT:
A barrier film 5 such as silicon oxide film or the like is formed on the back surface of a semiconductor substrate. Then, a copper-based metal film is formed on the principal surface of the semiconductor substrate. (Selected Drawing: FIG. 2)

REFERENCES:
patent: 3669734 (1972-06-01), Jacob et al.
patent: 4500394 (1985-02-01), Rizzo
patent: 4636824 (1987-01-01), Ikoma et al.
patent: 4866505 (1989-09-01), Roberts et al.
patent: 5121183 (1992-06-01), Ogasawara et al.
patent: 5574741 (1996-11-01), Arimoto
patent: 5639677 (1997-06-01), Lee et al.
patent: 5654245 (1997-08-01), Allen
patent: 5821168 (1998-10-01), Jain

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1963461

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.