Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-01-21
2000-05-23
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438231, 438563, H01L 21302, H01L 218238
Patent
active
060665637
ABSTRACT:
A manufacturing method of a complementary MOS transistor capable of providing line width stability at the time of lithography of gate patterning and suppressing punch through of an impurity from the silicon gate electrode to the side of a substrate is proposed. A method for manufacturing a semiconductor device having a complementary MOS transistor includes the steps of forming a poly-crystalline semiconductor film (6) serving as a gate electrode on one major surface of a semiconductor substrate (3), (4) via a gate insulation film (5), forming a first solid phase diffusion source (7) containing an impurity of a first conduction type selectively on a portion of the poly-crystalline semiconductor film (6) corresponding to a first channel MOS transistor forming region (4), forming a second solid phase diffusion source (9) containing impurities of a second conduction type on an entire surface including a surface of the first solid phase diffusion source (7) and a surface of the poly-crystalline semiconductor film (6) corresponding to a second channel MOS transistor forming region (3), polishing the second solid phase diffusion source (9) by a chemical mechanical polishing technique to a position where the first solid phase diffusion source (7) is exposed, and patterning the poly-crystalline semiconductor film (6) together with the first solid phase diffusion source (7) and the second solid phase diffusion source (9) to attain a gate electrode pattern.
REFERENCES:
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 4786611 (1988-11-01), Pfiester
patent: 5116778 (1992-05-01), Haskell et al.
patent: 5244835 (1993-09-01), Hachiya
patent: 5352625 (1994-10-01), Hoshi
patent: 5637525 (1997-06-01), Dennison
patent: 5723357 (1998-03-01), Huang
patent: 5770490 (1998-06-01), Frenette et al.
patent: 5780330 (1998-07-01), Choi
patent: 5880039 (1999-03-01), Lee
patent: 5897364 (1999-04-01), Pan
Jr. Carl Whitehead
Sony Corporation
Vockrodt Jeff
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1836726