Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-11-29

2011-12-27

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S629000, C438S633000, C438S653000, C257SE21579

Reexamination Certificate

active

08084350

ABSTRACT:
A method for manufacturing a semiconductor device includes can prevent defects of a semiconductor device due to the deterioration of electro migration (EM)/stress migration (SM) properties of the device as a result of metal corrosion and void generation in burying a novolac material. Embodiments can also prevent the generation of fencing in a metal wire structure.

REFERENCES:
patent: 6140226 (2000-10-01), Grill et al.
patent: 6893954 (2005-05-01), Maekawa
patent: 2002/0081854 (2002-06-01), Morrow et al.
patent: 2004/0067634 (2004-04-01), Kim et al.
patent: 2005/0224855 (2005-10-01), Liu et al.
patent: 2006/0105578 (2006-05-01), Hong et al.
patent: 2006/0148243 (2006-07-01), Wang
patent: 10-2003-0047075 (2003-06-01), None
patent: 10-2004-0084668 (2004-10-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4294867