Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-06-26
1999-11-09
McPherson, John A.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430313, 430317, 430318, 430396, G03F 700
Patent
active
059811498
ABSTRACT:
When a resist pattern used to manufacture a semiconductor integrated circuit element is formed, high alignment precision can be achieved. A method for manufacturing a semiconductor device comprises the steps of: irradiating exposure light onto a resist film coated on a substrate to be etched via a photomask on which at least a first opening pattern and a second opening pattern are formed to thereby expose the resist film; developing the resist film to thereby obtain a resist pattern; etching away the substrate while using the resist pattern as an etching mask to thereby obtain a predetermined pattern; and removing the resist pattern; wherein when the exposure light has first exposure intensity, the predetermined pattern obtained at the step is a pattern corresponding to the first opening pattern and a pattern corresponding to the second opening pattern; and when the exposure light has second exposure intensity, the predetermined pattern obtained at the step is only a pattern corresponding to the second opening pattern.
REFERENCES:
patent: 5728618 (1998-03-01), Tseng
patent: 5753417 (1998-05-01), Ulrich
patent: 5856067 (1999-01-01), Gabbrielli et al.
McPherson John A.
Mitsubishi Denki & Kabushiki Kaisha
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