Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-09-03
2011-10-04
Lebentritt, Michael (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S513000, C438S527000, C438S717000
Reexamination Certificate
active
08030187
ABSTRACT:
A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min.
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Mizuno Bunji
Nakamoto Keiichi
Okashita Katsumi
Sasaki Yuichiro
Lebentritt Michael
McDermott Will & Emery LLP
Panasonic Corporation
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