Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-09-10
2011-11-01
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C438S477000, C438S497000, C257SE21237, C257SE21570
Reexamination Certificate
active
08048770
ABSTRACT:
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
REFERENCES:
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5854123 (1998-12-01), Sato et al.
patent: 5891298 (1999-04-01), Kuroda et al.
patent: 6072239 (2000-06-01), Yoneda et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6391220 (2002-05-01), Zhang et al.
patent: 6452091 (2002-09-01), Nakagawa et al.
patent: 6544430 (2003-04-01), McCormack et al.
patent: 6592739 (2003-07-01), Sonoda et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6682963 (2004-01-01), Ishikawa
patent: 6818530 (2004-11-01), Shimoda et al.
patent: 6849877 (2005-02-01), Yamazaki et al.
patent: 6953735 (2005-10-01), Yamazaki et al.
patent: 6982181 (2006-01-01), Hideo
patent: 7015075 (2006-03-01), Fay et al.
patent: 7029950 (2006-04-01), Yonehara et al.
patent: 7060153 (2006-06-01), Yamazaki et al.
patent: 7060591 (2006-06-01), Yamazaki et al.
patent: 7067392 (2006-06-01), Yamazaki et al.
patent: 7094665 (2006-08-01), Shimoda et al.
patent: 7147740 (2006-12-01), Takayama et al.
patent: 7241666 (2007-07-01), Goto et al.
patent: 7271076 (2007-09-01), Yamazaki et al.
patent: 7285476 (2007-10-01), Shimoda et al.
patent: 7332381 (2008-02-01), Maruyama et al.
patent: 7351300 (2008-04-01), Takayama et al.
patent: 7446339 (2008-11-01), Yamazaki et al.
patent: 7465674 (2008-12-01), Tamura et al.
patent: 7536780 (2009-05-01), Shimizu et al.
patent: 7540079 (2009-06-01), Okuyama et al.
patent: 7566633 (2009-07-01), Koyama et al.
patent: 7591863 (2009-09-01), Watanabe et al.
patent: 7601236 (2009-10-01), Yamashita et al.
patent: 7648862 (2010-01-01), Maruyama et al.
patent: 7704765 (2010-04-01), Maruyama et al.
patent: 7767543 (2010-08-01), Tateishi et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2004/0209442 (2004-10-01), Takakuwa et al.
patent: 2005/0176180 (2005-08-01), Fay et al.
patent: 2005/0229370 (2005-10-01), Kobayashi
patent: 2005/0266591 (2005-12-01), Hideo
patent: 2006/0011288 (2006-01-01), Watanabe et al.
patent: 2006/0121694 (2006-06-01), Tamura
patent: 2006/0131069 (2006-06-01), Shimizu et al.
patent: 2006/0199382 (2006-09-01), Sugiyama et al.
patent: 2006/0216909 (2006-09-01), Yamazaki et al.
patent: 2007/0010067 (2007-01-01), Shimoda et al.
patent: 2007/0078228 (2007-04-01), Tateishi et al.
patent: 2007/0166954 (2007-07-01), Yamazaki et al.
patent: 2007/0176234 (2007-08-01), Yamazaki et al.
patent: 2007/0181246 (2007-08-01), Yamashita et al.
patent: 2007/0196999 (2007-08-01), Tamura et al.
patent: 2007/0243352 (2007-10-01), Takayama et al.
patent: 2008/0011420 (2008-01-01), Yoshizawa et al.
patent: 2008/0042168 (2008-02-01), Watanabe et al.
patent: 2008/0044940 (2008-02-01), Watanabe et al.
patent: 2008/0113486 (2008-05-01), Eguchi et al.
patent: 2008/0259575 (2008-10-01), Tanimura et al.
patent: 2009/0017599 (2009-01-01), Eguchi et al.
patent: 2009/0023251 (2009-01-01), Eguchi et al.
patent: 2009/0042387 (2009-02-01), Yamada et al.
patent: 2009/0194771 (2009-08-01), Koyama et al.
patent: 2010/0096090 (2010-04-01), Yoshioka et al.
patent: 2010/0148179 (2010-06-01), Maruyama et al.
patent: 1283874 (2001-02-01), None
patent: 1458665 (2003-11-01), None
patent: 1618602 (2005-05-01), None
patent: 1832179 (2006-09-01), None
patent: 0 848 415 (1998-06-01), None
patent: 1 069 602 (2001-01-01), None
patent: 1 363 319 (2003-11-01), None
patent: 09-100448 (1997-04-01), None
patent: 10-125931 (1998-05-01), None
patent: 2000-279852 (2000-10-01), None
patent: 2001-026500 (2001-01-01), None
patent: 2001-111081 (2001-04-01), None
patent: 2001-328849 (2001-11-01), None
patent: 2001-331120 (2001-11-01), None
patent: 2003-174153 (2003-06-01), None
patent: 2003-237263 (2003-08-01), None
patent: 2004-047975 (2004-02-01), None
patent: 2004-153021 (2004-05-01), None
patent: 2004-158765 (2004-06-01), None
patent: 2004-311955 (2004-11-01), None
patent: 2005-079395 (2005-03-01), None
patent: 2005-079553 (2005-03-01), None
patent: 2005-148638 (2005-06-01), None
patent: 2006-202820 (2006-08-01), None
patent: 2006-216891 (2006-08-01), None
patent: 2006-259095 (2006-09-01), None
patent: 2007-184495 (2007-07-01), None
patent: 1999-028523 (1999-04-01), None
patent: 2005-048517 (2005-05-01), None
patent: WO 97/08745 (1997-03-01), None
patent: 2006/003816 (2006-01-01), None
Office Action (Application No. 2008-0102326) dated May 25, 2009.
Office Action (Application No. 2008-0102327) dated May 25, 2009.
Office Action (Application No. 2008-0102328) dated May 25, 2009.
Office Action (Application Serial No. 200810168158.4) dated Oct. 9, 2009.
Office Action (Application No. 200810168156.5) dated Aug. 28, 2009.
Office Action (Application No. 200810168157.X) dated Aug. 21, 2009.
Office Action (U.S. Appl. No. 200710153243.9) dated Apr. 1, 2010.
Office Action (U.S. Appl. No. 12/232,049) dated Jun. 1, 2009.
Office Action (U.S. Appl. No. 12/232,049) dated Jan. 8, 2010.
Office Action (U.S. Appl. No. 12/232,049) dated Apr. 29, 2010.
Office Action (U.S. Appl. No. 12/232,037) dated Oct. 16, 2009.
Office Action (U.S. Appl. No. 12/232,037) dated Feb. 25, 2010.
Office Action (U.S. Appl. No. 12/232,037) dated Jul. 13, 2010.
Official Action (U.S. Appl. No. 12/232,049) dated Oct. 1, 2010.
Official Action (U.S. Appl. No. 11/902,515) dated Sep. 13, 2010.
Official Action (U.S. Appl. No. 12/232,037) dated Sep. 15, 2010.
Office Action (U.S. Appl. No. 12/232,037) dated Mar. 21, 2011.
Notice of Allowance (U.S. Appl. No. 12/232,049) dated Mar. 17, 2011.
Notice of Allowance (U.S. Appl. No. 11/902,515) dated Apr. 4, 2011.
Notice of Allowance (U.S. Appl. No. 11/902,515) dated Jun. 23, 2011.
Notice of Allowance (U.S. Appl. No. 12/232,049) dated Jul. 6, 2011.
Eguchi Shingo
Hashimoto Kenichi
Hirosue Misako
Hosaka Yasuharu
Monma Yohei
Brown Valerie
Nguyen Ha Tran T
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4255611