Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-08-29

2010-10-05

Davis, Daborah Chacko (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S311000, C430S950000

Reexamination Certificate

active

07807336

ABSTRACT:
Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2plasma treatment step after forming a Si-containing anti-reflection film.

REFERENCES:
patent: 6475922 (2002-11-01), Zheng
patent: 6534414 (2003-03-01), Wang et al.
patent: 6589339 (2003-07-01), Takeshita et al.
patent: 6916749 (2005-07-01), Tsujita et al.
patent: 6969580 (2005-11-01), Minami
patent: 2006/0003268 (2006-01-01), Hong et al.
patent: 2007/0148983 (2007-06-01), Lee et al.
patent: 10-1998-028362 (1998-07-01), None
patent: 10-20010002129 (2001-01-01), None
patent: 10-20010108724 (2001-12-01), None
patent: 10-20030070658 (2003-09-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4235419