Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-01-09

2010-11-30

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S629000, C438S639000, C438S643000, C438S644000, C438S685000, C257SE21579, C257SE21584

Reexamination Certificate

active

07842609

ABSTRACT:
A hole is formed in an insulating layer. A semiconductor substrate is heated at a temperature of equal to or more than 330° C. and equal to or less than 400° C. Tungsten-containing gas and at least one of B2H6gas and SiH4gas are introduced into a reaction chamber to thereby form a first tungsten layer. Subsequently, at least one of H2gas and inert gas is introduced into the reaction chamber, the temperature of the semiconductor substrate is raised to equal to or more than 370° C. and equal to or less than 410° C. with 30 or more seconds, and tungsten-containing gas is introduced into the reaction chamber to thereby form a second tungsten layer on the first tungsten layer.

REFERENCES:
patent: 5273609 (1993-12-01), Moslehi
patent: 6309966 (2001-10-01), Govindarajan et al.
patent: 6403478 (2002-06-01), Seet et al.
patent: 7141494 (2006-11-01), Lee et al.
patent: 2008/0105983 (2008-05-01), Jeong et al.
patent: 11-087268 (1999-03-01), None
patent: 2001-525491 (2001-12-01), None
patent: 2007-009298 (2007-01-01), None

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