Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-24
1999-06-29
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438942, 438945, H01L 2144
Patent
active
059181486
ABSTRACT:
In a method for manufacturing a semiconductor device having a sharp step portion, a mask pattern to perform a patterning process of a photoresist layer is formed so that the dimension of the mask pattern is set to be larger than a design value of the corresponding wiring pattern only at a region where the thickness of the photoresist layer is different from that at a flat portion, and the mask pattern dimension at the flat portion which is away from the step portion is set to a design value of the corresponding wiring pattern. By using the mask pattern thus formed, the wiring dimension in the vicinity of the step portion can be prevented from becoming smaller than that at the flat portion under the condition that the wiring dimension of the design value can be obtained at the flat portion, so that the wirings can be formed according to the design value at any place containing the portion in the vicinity of the step portion and the flat portion. As a result, the reduction in product quality and yield due to the partial reduction in restoring level, a lag of timing, etc. can be avoided.
NEC Corporation
Niebling John F.
Zarneke David A.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1386561