Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2007-10-24
2010-10-12
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C257SE21592
Reexamination Certificate
active
07811911
ABSTRACT:
A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.
REFERENCES:
patent: 4692190 (1987-09-01), Komatsu
patent: 5173129 (1992-12-01), Nishiike et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5389450 (1995-02-01), Kennedy et al.
patent: 5411563 (1995-05-01), Yeh et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5640045 (1997-06-01), Krausse, III
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5874175 (1999-02-01), Li
patent: 6174374 (2001-01-01), Zhang et al.
patent: 6380558 (2002-04-01), Yamazaki et al.
patent: 6494162 (2002-12-01), Zhang et al.
patent: 6645826 (2003-11-01), Yamazaki et al.
patent: 6770143 (2004-08-01), Zhang et al.
patent: 6834943 (2004-12-01), Mihara et al.
patent: 7015505 (2006-03-01), Yamazaki et al.
patent: 7019385 (2006-03-01), Zhang et al.
patent: 7132686 (2006-11-01), Yamazaki et al.
patent: 2003/0057489 (2003-03-01), Yamazaki
patent: 2005/0214984 (2005-09-01), Maruyama et al.
patent: 2007/0096107 (2007-05-01), Brown
patent: 05-182923 (1993-07-01), None
patent: 2003-249661 (2003-09-01), None
Jinbo Yasuhiro
Miyairi Hidekazu
Shimomura Akihisa
Movva Amar
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Bradley K
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