Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-12
2010-10-12
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S613000, C438S508000, C438S508000
Reexamination Certificate
active
07811922
ABSTRACT:
A method for manufacturing a semiconductor device includes: preparing a wiring board having a base substrate and wiring that is plated on surface with a plating metal; pressing a bump that is formed on the active side of the semiconductor chip against an end part of the wiring of the wiring board, thereby exfoliating the area surrounding the pressed portion of the wiring from the base substrate while keeping the end of the wiring bonded with the base substrate; melting the plating metal that is located on the end part of the wiring, thereby causing the plating metal and the bump to form an alloy that bonds the bump and the wiring and infiltrate the plating metal into a space between the wiring and the base substrate; and judging that the bump and the wiring are well bonded if the plating metal has infiltrated a space between the wiring and the base substrate so as to have an area, width or length of infiltration that exceeds a reference value.
REFERENCES:
patent: 6831000 (2004-12-01), Murayama
patent: 7041591 (2006-05-01), Lee et al.
patent: A-2006-344870 (2006-12-01), None
Le Dung A.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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