Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1994-03-21
1998-09-08
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566531, 1566381, 216 62, H01L 213065
Patent
active
058040340
ABSTRACT:
A method for attaining a uniform roughening of a silicon semiconductor surface with a microscopic amount of roughness at the .ANG. level, wherein the amount of roughness may be accurately and precisely controlled without complicating the manufacturing processes and increasing the manufacturing cost, and regardless of the shape of the silicon surface area of the substrate. The substrate with the silicon surface area is immersed in a cleansing solution, such as SC1 for example, containing a metallic substance, such as Fe, Ni, Cu, Zn, Al, and Cr, for example, at the ppb level to wash the surface. Then, a silicon oxide film uniformly containing the metallic substance is formed on the silicon surface of the substrate after drying, and isotropic etching is performed on the surface of the substrate formed with the silicon oxide film by etching Si from the silicon oxide film at a high ratio of selectivity to form microscopic irregularities. This procedure increases the effective surface area of the silicon surface in a highly precise manner and can be employed in making trench type or stack type DRAM memory cell structures.
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"Influence of Cin On The Native Oxide Growth of Si"; J. Appl. Phys. (USA), vol. 69, No. 11, Graf et al., Jun. 1991', pp. 7620-7626.
"Surface Chemical Cleaning and Passivation For Semiconductor Processing", Symposium, Material Research Soc., Xi+518 pp., 1993, Bedge et. al., abstract only.
"Radiochemical Study of Semiconductor Surface Contamination, II. Deposition of Trace Impurities on Silicon and Silica", Kern, RCA Lab Rev (1970), 31(2), abstract only.
Breneman R. Bruce
Donaldson Richard L.
Goudreau George
Kempler William B.
Texas Instruments Incorporated
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