Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-01-07

2009-12-01

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S199000, C438S239000, C257SE21616

Reexamination Certificate

active

07625789

ABSTRACT:
A field effect transistor having a T-shaped gate electrode is formed on a GaAs substrate, and the T-shaped gate electrode of the field effect transistor is coated with a SiO2film. A lower electrode of a MIM capacitor is formed on the GaAs substrate. The active portion of the field effect transistor is coated with a fluorine-containing polymer layer. A SiN film, which is a capacity insulating film of the MIM capacitor, is formed on the fluorine-containing polymer layer and the lower electrode. After removing the SiN film from the fluorine-containing polymer layer, the fluorine-containing polymer layer is selectively removed from the SiO2film and the SiN film. An upper electrode of the MIM capacitor is formed opposite the lower electrode on the SiN film.

REFERENCES:
patent: 2007/0267705 (2007-11-01), Won et al.
patent: 7-22310 (1995-01-01), None
patent: 7-235644 (1995-09-01), None

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