Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-02-04

2009-11-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S412000, C438S421000, C438S422000, C257SE21533

Reexamination Certificate

active

07622359

ABSTRACT:
A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate; and (d) wet-etching and removing the SiGe layer formed under the Si layer. In the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.

REFERENCES:
patent: 2006/0223270 (2006-10-01), Hara
patent: 2007/0080402 (2007-04-01), Kato
patent: 2007/0176236 (2007-08-01), Oka et al.
patent: 2007/0296000 (2007-12-01), Hara
patent: 2009/0170293 (2009-07-01), Matsuzawa
patent: 2005-354024 (2005-12-01), None
T. Sakai et al. “Separation by Bonding Si Islands (SBSI) for LSI Applications”, Second International SiGe Technology and Device Meeting, Meeting Abstract, pp. 230-231, May (2004).

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