Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-04
2009-08-11
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S149000
Reexamination Certificate
active
07572688
ABSTRACT:
An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5091337 (1992-02-01), Watanabe et al.
patent: 5262654 (1993-11-01), Yamazaki
patent: 5340758 (1994-08-01), Wei et al.
patent: 5462885 (1995-10-01), Nasu et al.
patent: 5496752 (1996-03-01), Nasu et al.
patent: 5825050 (1998-10-01), Hirakawa
patent: 5962896 (1999-10-01), Yabuta et al.
patent: 6013930 (2000-01-01), Yamazaki et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6207480 (2001-03-01), Cha et al.
patent: 6218219 (2001-04-01), Yamazaki et al.
patent: 6355941 (2002-03-01), Yamazaki et al.
patent: 6387737 (2002-05-01), Yamazaki et al.
patent: 6445428 (2002-09-01), Fujikawa et al.
patent: 6518108 (2003-02-01), Fukui et al.
patent: 6528357 (2003-03-01), Dojo et al.
patent: 6797982 (2004-09-01), Okada et al.
patent: 6864133 (2005-03-01), Aoki et al.
patent: 6894311 (2005-05-01), Maeda et al.
patent: 6919158 (2005-07-01), Kawamura et al.
patent: 7037766 (2006-05-01), Maeda et al.
patent: 7057598 (2006-06-01), Azami et al.
patent: 7176069 (2007-02-01), Yamazaki et al.
patent: 7183146 (2007-02-01), Yamazaki et al.
patent: 2005/0012097 (2005-01-01), Yamazaki
patent: 2005/0014319 (2005-01-01), Yamazaki et al.
patent: 2005/0179036 (2005-08-01), Yamazaki et al.
patent: 3065528 (2000-07-01), None
patent: 2002-335153 (2002-11-01), None
S. Kasouit et al.,Microcrystalline Silicon: An Emerging Material for AMLCD, AM-LCD, Digest of Technical Papers, Jan. 1, 2003, pp. 111-114.
T. Shimoda,39.1: Invited Paper: Ink-jet Technology for Fabrication Processes of Flat Panel Displays, SID 03 Digest, 2003, pp. 1178-1181.
Furuno Makoto
Imai Keitaro
Maekawa Shinji
Nakamura Osamu
Yamazaki Shunpei
Luu Chuong A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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