Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2009-12-22
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000, C257SE27100, C257SE29151, C257SE51005
Reexamination Certificate
active
07635883
ABSTRACT:
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.
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Azami Munehiro
Isobe Atsuo
Kokubo Chiho
Shibata Hiroshi
Shiga Aiko
Hoang Quoc D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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