Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2004-04-30
2009-06-16
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21008, C257S664000
Reexamination Certificate
active
07547558
ABSTRACT:
An Al2O3film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al2O3film is preferably optimized according to amount of remanent polarization and fatigue tolerance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Next, oxygen is supplied to a PZT film via the Al2O3film by executing a heat treatment in an oxygen atmosphere. As a result, an oxygen deficit in the PZT film is made up for. At this time, evaporation of Pb in the PZT film is suppressed because of the Al2O3film, and deterioration of the fatigue tolerance responsive to decrease of Pb amount is suppressed. Subsequently, another Al2O3film is formed as a second protective film by the sputtering process for opposing the deterioration factor in later process. The thickness of the Al2O3film is preferably the thickness which sufficiently protects the ferroelectric capacitor from the deterioration factor in later wiring process.
REFERENCES:
patent: 6037003 (2000-03-01), Gordon et al.
patent: 6225156 (2001-05-01), Cuchiaro et al.
patent: 6469333 (2002-10-01), Takai et al.
patent: 6673672 (2004-01-01), Sashida
patent: 6740531 (2004-05-01), Cho et al.
patent: 6809360 (2004-10-01), Kato
patent: 6839220 (2005-01-01), Hilliger et al.
patent: 2001/0044205 (2001-11-01), Gilbert et al.
patent: 2002/0021514 (2002-02-01), Bui et al.
patent: 2002/0127867 (2002-09-01), Lee
patent: 2003/0089954 (2003-05-01), Sashida
patent: 2003/0141527 (2003-07-01), Joo et al.
patent: 2003/0211685 (2003-11-01), Ohyagi
patent: 2004/0005724 (2004-01-01), Lee et al.
patent: 2004/0043517 (2004-03-01), Sashida
patent: 2004/0089894 (2004-05-01), Sashida
patent: 2004/0105213 (2004-06-01), Egger et al.
patent: 2004/0141390 (2004-07-01), Won et al.
patent: 2004/0183116 (2004-09-01), Cho et al.
patent: 2005/0002266 (2005-01-01), Kanaya et al.
patent: 2005/0205906 (2005-09-01), Udayakumar et al.
patent: 2001126221 (2001-05-01), None
patent: 2003-0076216 (2003-09-01), None
Patent Abstracts of Japan, Publication No. 2002100742, dated Apr. 5, 2002.
Korean Office Action with English translation.
Okita Yoichi
Sashida Naoya
Watanabe Jun-ichi
Anya Igwe U.
Fujitsu Microelectronics Limited
Pizarro Marcos D.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4112244