Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1998-02-11

1999-11-23

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438664, 438683, 438688, H01L 2128

Patent

active

059899964

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of: forming a laminated film by forming an aluminum film and a titanium film in this order on P-type and N-type electrically conductive regions of a silicon substrate and forming a silicide layer containing a titanium silicide as a major component on the electrically conductive region by allowing the laminated film to react with silicon constituting the silicon substrate by a first heat treatment.

REFERENCES:
patent: 4920069 (1990-04-01), Fossum et al.
patent: 5369055 (1994-11-01), Chung
patent: 5529958 (1996-06-01), Yaoita
patent: 5776822 (1998-07-01), Fujii et al.
Katz, A., et al., "Metal/Al/Si contacts formed by eutectic rapid thermal melting", J. Vac. Sci. Technol., a 7(3), May/Jun. 1989, pp. 1484-1487.

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