Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-12-22

2009-06-02

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S633000, C438S637000, C438S687000, C257SE21174, C257SE21175, C257SE21526, C257SE21583, C257SE21585

Reexamination Certificate

active

07541279

ABSTRACT:
A method for manufacturing a semiconductor device is provided. The method includes the steps of forming an interlayer insulating layer on a semiconductor substrate, selectively patterning the interlayer insulating layer to form a contact hole, depositing a first metal on an inner surface of the contact hole, submerging the semiconductor substrate on which the first metal is deposited into an electrochemical plating (ECP) solution bath in which a second metal is dissolved, dissolving the first metal in the ECP solution bath, plating the first and second metals dissolved in the ECP solution bath at the same time to gap-fill an alloy of the first and second metals in the contact hole, and removing the alloy using the interlayer insulating layer as an end point in a CMP process to form an alloy interconnection.

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