Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-03-31

2009-10-13

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S245000, C438S270000, C438S700000, C257SE21384, C257SE21428

Reexamination Certificate

active

07601603

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

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