Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-12-30

2008-10-14

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S323000, C430S330000, C430S331000, C430S327000

Reexamination Certificate

active

07435534

ABSTRACT:
A method for manufacturing a semiconductor device effectively removes a solvent of a bottom antireflective coating film is using a porous material so as to prevent acid in a photoresist film from reacting with the solvent during a post exposure baking (PEB) process. The method includes forming a pattern formation layer on a wafer, forming a bottom antireflective coating film containing a solvent, on the pattern formation layer, arranging a porous material layer in contact with the bottom antireflective coating film, absorbing the solvent contained in the bottom antireflective coating film using the porous material layer, forming photoresist film patterns on predetermined portions of the bottom antireflective coating film, etching the bottom antireflective coating film using the photoresist film patterns as masks, and etching the pattern formation layer using the photoresist film patterns as masks to form patterns.

REFERENCES:
patent: 6797735 (2004-09-01), Nagasuna et al.
patent: 2005/0277756 (2005-12-01), Iwabuchi et al.
patent: 2006/0211256 (2006-09-01), Takei et al.

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