Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-05
2008-09-23
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S628000, C438S643000, C438S653000, C438S687000, C257SE21304, C257SE21311, C257SE21576, C257SE21582, C257SE21583
Reexamination Certificate
active
07427561
ABSTRACT:
A semiconductor device manufacturing method wherein a metal suicide layer is formed via an in-situ process. The method includes forming a gate electrode on a semiconductor substrate; forming an insulation side wall at either lateral surface of the gate electrode; forming a source/drain region in a surface of the semiconductor substrate at either side of the gate electrode; forming a metal layer on the surface of the semiconductor substrate including the gate electrode; performing a plasma treatment on the metal layer; forming a capping material layer on the metal layer; performing an annealing process upon the semiconductor substrate, to form a metal silicide layer on the surface of the semiconductor substrate at positions corresponding to the gate electrode and the source/drain region; and removing the capping material layer and the metal layer remained without reaction with the gate electrode and the semiconductor substrate.
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Dongbuanam Semiconductor Inc.
Lebentritt Michael S
McKenna Long & Aldridge LLP
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