Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-12-05

2008-09-23

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S628000, C438S643000, C438S653000, C438S687000, C257SE21304, C257SE21311, C257SE21576, C257SE21582, C257SE21583

Reexamination Certificate

active

07427561

ABSTRACT:
A semiconductor device manufacturing method wherein a metal suicide layer is formed via an in-situ process. The method includes forming a gate electrode on a semiconductor substrate; forming an insulation side wall at either lateral surface of the gate electrode; forming a source/drain region in a surface of the semiconductor substrate at either side of the gate electrode; forming a metal layer on the surface of the semiconductor substrate including the gate electrode; performing a plasma treatment on the metal layer; forming a capping material layer on the metal layer; performing an annealing process upon the semiconductor substrate, to form a metal silicide layer on the surface of the semiconductor substrate at positions corresponding to the gate electrode and the source/drain region; and removing the capping material layer and the metal layer remained without reaction with the gate electrode and the semiconductor substrate.

REFERENCES:
patent: 5741725 (1998-04-01), Inoue et al.
patent: 6797609 (2004-09-01), Noguchi et al.
patent: 6838381 (2005-01-01), Hsu et al.
patent: 2005/0139934 (2005-06-01), Lee et al.
patent: 2006/0228897 (2006-10-01), Timans
patent: 1020030001038 (2001-06-01), None

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