Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-09-25

2008-09-09

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S149000, C438S150000, C438S166000, C438S308000, C438S487000, C257SE21094

Reexamination Certificate

active

07422987

ABSTRACT:
It is an object of the invention to provide a technique forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configuration of the invention is that a first semiconductor region is formed on a substrate having transparent characteristics of a visible light region, a barrier film is formed over the first semiconductor region, a heat retaining film covering a top and side surfaces of the first semiconductor region is formed through the barrier film, the first semiconductor region is crystallized by scanning of a continuous wave laser beam from one edge of the first semiconductor region to the other through the substrate, the heat retaining film and the barrier film are removed, then a second semiconductor region is formed as an active layer of TFT by etching the first semiconductor region. A pattern of the second semiconductor region formed by etching is formed in a manner that a scanning direction of the laser beam and a channel length direction of the TFT are arranged in almost the same direction in order to smooth drift of carriers.

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