Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1991-10-22
1993-11-09
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430311, 430313, 430316, 430318, 156625, 156644, 427 58, 427123, 437225, 437228, 437229, 437230, 437245, G03C 500, H01L 2146
Patent
active
052601692
ABSTRACT:
A method for manufacturing a semiconductor device having a via hole penetrating a semiconductor substrate and electrically and thermally connecting an electrode of an element disposed on a front surface of the substrate to a metal layer disposed on a back surface of the substrate includes forming on the front surface of the substrate a metal pattern having an opening at a region where the via hole is to be formed and connected to a part of the electrode of the element, forming a hole, and forming a metal film connected to the metal pattern on the inside surface of the hole. The metal pattern can be formed using a positive resist on a flat substrate whereby a highly precise pattern is obtained.
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Sumitani et al, "A High Aspect Ratio Via Hole Dry Etching Technology For High Power GaAs MESFET", IEEE Gallium Arsenide Integrated Circuit Symposium, Oct. 1989, pp. 207-210.
Duda Kathleen
McCamish Marion E.
Mitsubishi Denki & Kabushiki Kaisha
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