Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S598000, C438S605000, C438S620000, C257S296000, C257S298000, C257S779000, C257SE21585, C257SE21507, C257SE21657
Reexamination Certificate
active
11617692
ABSTRACT:
A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask as well as an anti-reflection film to reduce contact resistance, prevent reduction of a line-width of a lower interlayer insulating film and eliminate processes for depositing the interlayer insulating film and a polysilicon layer and etching the polysilicon layer to reduce a production period and cost of products.
REFERENCES:
patent: 2002/0058379 (2002-05-01), Sano
patent: 2004/0149992 (2004-08-01), Park et al.
patent: 2006/0261392 (2006-11-01), Lee et al.
Ban Keun Do
Lee Ki Lyoung
Park Sa Ro Han
Ahmadi Mohsen
Hynix / Semiconductor Inc.
Lebentritt Michael S.
Townsend and Townsend / and Crew LLP
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