Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-09-02

2008-09-02

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S401000, C257S797000

Reexamination Certificate

active

11442770

ABSTRACT:
A method for manufacturing a semiconductor device comprises forming a laser marking, forming a trench pattern, forming a metal interconnection layer, removing a predetermined portion of the metal interconnection layer, and planarizing the metal interconnection layer. The laser marking is formed in a first region of a wafer, and the first region has a first width from an edge of the wafer. The trench pattern is formed above the wafer except for above the first region. The metal interconnection layer is formed above the wafer where the laser marking and the trench pattern are formed. The predetermined portion of the metal interconnection layer is removed, and the predetermined portion has a second width from the edge of the wafer equal to or greater than the first width. And the metal interconnection layer above the wafer where the trench pattern is formed is planarized to a predetermined thickness.

REFERENCES:
patent: 7172948 (2007-02-01), Fang et al.
patent: 2002/0090793 (2002-07-01), Kawano

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3934041