Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-03-11
2008-03-11
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S456000, C438S457000, C438S458000
Reexamination Certificate
active
11452987
ABSTRACT:
A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6335479 (2002-01-01), Yamada et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6521511 (2003-02-01), Inoue et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 7169652 (2007-01-01), Kimura
patent: 2002/0146893 (2002-10-01), Shimoda et al.
patent: 2003/0003687 (2003-01-01), Yanagita et al.
patent: 2003/0024635 (2003-02-01), Utsunomiya
patent: 2003/0087073 (2003-05-01), Kobayashi
patent: 2003/0217805 (2003-11-01), Takayama et al.
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2004/0129960 (2004-07-01), Maruyama et al.
patent: 2004/0219762 (2004-11-01), Shimoda et al.
patent: 10-125929 (1998-05-01), None
patent: 10-125931 (1998-05-01), None
patent: 2004-214281 (2004-07-01), None
Arai Yasuyuki
Suzuki Yukie
Takayama Toru
Deo Duy-Vu N
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3930763